Name QUINE20250917; Partno 20250917001; Date 09/17/25; Revision v01; Designer (c) David Vajda; Company dvajda.de; Assembly Digital Test Brench from Head; Location GE-72070; Pin 1 = /OE Pin 2 = Y0 Pin 3 = NC Pin 4 = NC Pin 5 = NC Pin 6 = NC Pin 7 = NC Pin 8 = NC Pin 9 = NC Pin 10 = GND Pin 11 = CLK Pin 12 = X2 Pin 13 = X1 Pin 14 = X0 Pin 15 = NC Pin 16 = NC Pin 17 = NC Pin 18 = NC Pin 19 = NC Pin 20 = VCC
# (C) David Vajda # components excersize ... EECA/JIS # 2025-09-17 D: nicht keramik, halbleiterverbundsmaterial... AD: Germanium NF-Leistungstransistor CA: Gallium-Arsenid Diode RC: halbleiterverbundsmaterial NF-LeistungsTransistor CD: Gallium-Arsenid NF-Leistungstransistor AA: Germanium Diode DF: indium-Arsenid HF-Transistor AF: Germanium HF-Transistor BF: Silicium HF-Transistor RD: halbleiterverbundsmaterial NF-Leistungstransistor AB: Germanium Kapazitaetsdiode BA: Silicium Diode CC: Germanium-Arsenid NF-Transistor RF: halbleiterverbundsmaterial HF-Transistor DD: Gallium-Arsenid NF-Leistungstransistor CD: Silicium NF-Leistungstransistor DA: Gallium-Arsenid Diode BF: Silicium HF-Transistor CC: Germanium-Arsenid Germanium-arsenid BD BE DD DA RA AD AD DC AD DA DC CA CB CF DC RE DB CE DC DF RB BA AD AF AE CC DC DA BF DF BF DA RD AD AB CE CB DD BA RA CA CA RF DA CD AC JEDEC EECAExerciseMi 17. Sep 15:15:03 CEST 2025.out.txt 3J 1B 0K 2 2J 0 4A 3C 3K 1C 1C 4K 3J 4K 3B 2K 3B 1C 2K 2D 4A 1A 0B 0A 3D 0J 3 1K 2K 3A 3C 3B 2A 4J 0 4K 0 3 1J 4B 1 0B 1 1A 3B 0 1D 1K 4C 1D 2A 2K 2 4 3D 4A 0 1B 3D 0C 1K 2J 2B 2B
written: 2025-07-18 by david vajda lzw exercise Mi 17. Sep 15:25:30 CEST 2025 ACBAAAACCAACACCBCBBACCCBBBBACBCABAABCACABABCBBBABBBCBBACABBCCCCBAACCCCBACAACACBAABBCBBCBBCCCCCBBAAACBBACAABAABABCBCBBAACACCBABAA